Samsung offers the world 's fastest internal memory 1TB eUFS 2.1
Samsung, which is preparing to launch the Galaxy G S10, recently announced that it has become a green brand. Looking ahead, the South Korean company is working on the smallest camera sensor in its history, and has just announced the world's fastest internal memory.
The company announced the new 2.1 eBFS 2.1, the fastest internal memory in the world. Samsung has confirmed that mass production of this chip of memory has already begun to be used in next-generation mobile applications.
The company announced the new 2.1 eBFS 2.1, the fastest internal memory in the world. Samsung has confirmed that mass production of this chip of memory has already begun to be used in next-generation mobile applications.
The new chip comes four years after Samsung introduced a 128-gigabyte (GB) UFS chip and three years after a 256-gigabyte chip. With the new internal memory, users can enjoy the same storage capacity as a laptop without having to connect their smartphones with additional external memory cards as they claim from the company itself.
"1TB eUFS is expected to play a key role in providing a more user-friendly experience for the notebook in the next generation of next generation mobile phones," said Chul Choi, vice president of sales and marketing for memory at Samsung Electronics. As new memory chip users can store 260 videos of 10 minutes in 4K UHD format.
10 times the typical microSD card speed
"1TB eUFS is expected to play a key role in providing a more user-friendly experience for the notebook in the next generation of next generation mobile phones," said Chul Choi, vice president of sales and marketing for memory at Samsung Electronics. As new memory chip users can store 260 videos of 10 minutes in 4K UHD format.
10 times the typical microSD card speed
Samsung also asserts that the 1U terabyte eUFS module has a read speed of up to 1000 Mbps, 10 times the speed of a microSD card, meaning it can transfer 5 gigabytes of HD video in just five seconds. In addition, random write speed is 500 times faster than a high performance microSD card.
Compared to the performance of 512 Gigabit eUFS 2.1 for November 2017, the company's new chip has a reading speed of up to 1,000 MB / s, while the previous version reached 860 Mbps. With regard to write speed, there is also a marked improvement, with 1 TB of eUFS 2.1 to 260 MB / s. In addition, the random read speed increased to 38% with regard to 512 GB, up to 58000 IOPS.
The company plans to expand production in the face of strong demand for 1 terabyte of mobile phone companies around the world.
